Phase Change Memory por Moinuddin K. Qureshi

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Phase Change Memory Moinuddin K. Qureshi

AUTOR/AUTORA:

Moinuddin K. Qureshi

Descripción

Sinopsis

As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs.Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

Acerca de Moinuddin K. Qureshi

Georgia Institute of Technology

Acerca de Sudhanva Gurumurthi

University of Virginia

Acerca de Bipin Rajendran

IBM Research

Datos del libro
Morgan & Claypool Publishers 2011
ISBN: 9781608456666
Idioma: Español
Formatos: pdf epub kindle mobi

En otros lados…

$2376.00

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